MmWave (30-100GHz) and sub-THz (100-300GHz) bands are seen as the future for next-generation RF systems including wireless ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...

Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

This increased optical power output enables higher measurement precision and accelerated processing of biological samples, ...

According to a study published in Advanced Functional Materials, the refined technique can bypass the high-temperature ...

Opening on 22 May to much fanfare, KLA’s £138 million facility sits at the heart of the cluster, in an industrial area on the ...

Advances in TMD growth Building on our success in scaling ultra-wide bandgap materials, we have made significant progress in expanding scalable growth of two-dimensional (2D) materials, specifically ...

KLA Corporation, a US company specialising ni semiconductor process control, has announced the opening of its new $138m R&D and manufacturing center in Newport, Wales, UK, continuing the company’s ...

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Altum RF will show its latest RF and mmWave products and technical expertise at IMS 2025, to be held in San Francisco, US.15 ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...

Navitas Semiconductor, maker of GaNFast GaN and GeneSiC SiC power semiconductors, has announced a collaboration with NVIDIA ...