The top layer of ZEP520 is more efficient than other resists (PMMA etc.) for e-beam lithography, due to its high resolution and high sensitivity. Here, a set of process parameters have been optimized ...

A new technical paper (preprint) titled “Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography using Amorphous ...

The JEOL JSM-6500F is a Field Emission Scanning Electron Microscope (FESEM) w/Electron Beam Lithography attachment, and Nanometer Pattern Generation Systems (NPGS). It offers high resolution images of ...

Rapidus Corp., a manufacturer of advanced logic semiconductors, announced the delivery and installation of ASML’s EUV lithography equipment at its Innovative Integration for Manufacturing (IIM-1) ...

Focused Ion Beam Lithography is a very powerful technique for directly writing patterns on many substrates Cl], it is a mask-less and resist-less technique that allows a very wide range of ...

Hydrogen silsesquioxane (HSQ) offers high-resolution patterning capabilities in electron beam lithography. However, electron scattering within the resist remains challenging to detect, complicating ...

In our approach, a silicon surface is first patterned with gold, using “lift-off” electron-beam lithography (“top-down”), and the resulting pattern is then amplified by surface-initiated ...