The top layer of ZEP520 is more efficient than other resists (PMMA etc.) for e-beam lithography, due to its high resolution and high sensitivity. Here, a set of process parameters have been optimized ...

A multinational research team, including engineers from the University of Cambridge and Zhejiang University, has developed a ...

This paper investigates the possibility of creating an array of Schottky emitters for use in parallel electron beam lithography. The Schottky source consists of a tiny single crystal W wire ...

We report a patterning technique called bilayer e-beam lithography (BEBL), which employs direct-writing electron beam lithography on a bilayer photoresist system to achieve outline-like features with ...