The first step is to coat a wafer with a layer of e-beam resist. [Zach] used PMMA, commonly known as acrylic plastic, and applied it using spin coating after dissolving it in anisole. He then ...
RAITH150 Two Applications: High Electron Mobility Transistor (HEMT) device with 75 nm T-gate (IUHFSE, Moscow, Russia) RAITH150 Two Applications: 4.5-nm lines and spaces in HSQ e-beam resist (MIT in ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback